Jose María Ulloa is Senior Researcher at the Institute for Optoelectronic Systems and Microtechnology (ISOM) of Universidad Politécnica de Madrid (UPM), and Associate Professor at the Materials Science Department. He received the PhD degree from the Telecommunications Engineering School of UPM in 2005. From 2005 to 2008 he was a postdoctoral researcher at the Photonic and Semiconductor Nanophysics group at the Eindhoven University of Technology (The Netherlands), working on the cross-sectional scanning tunneling microscopy analysis of self-assembled quantum dots at the atomic scale. In 2008 he joined the ISOM-UPM, where he leads a small research group dedicated to the molecular beam epitaxy growth and characterization of novel GaAs-based nanostructure architectures involving Sb and N, and to their application to photovoltaics. He is particularly interested in developing strategies to go beyond strain and band structure engineering to accurate wavefunction engineering in nanostructures. He is author or co-author of 6 book chapters and 110 papers in JCR indexed journals. He has received several fellowships and awards, such as the prestigious Ramón y Cajal Research Fellowship, the special UPM’s PhD award and the Young Researcher Medal from the Spanish Royal Engineering Academy.