Gwan-Hyoung Lee is a South Korean materials scientist and professor in the Department of Materials Science and Engineering at Seoul National University, known for his pioneering research on two-dimensional (2D) materials such as graphene and transition metal dichalcogenides. He earned his B.S. and Ph.D. from Seoul National University and gained industry experience as a senior engineer at Samsung Electronics before pursuing academic research, including postdoctoral work at Columbia University. His work focuses on the synthesis, characterization, and device applications of atomically thin materials, with major contributions such as the development of “hypotaxy,” a method for growing wafer-scale single-crystal 2D semiconductors. He has authored over 200 peer-reviewed scientific papers with tens of thousands of citations, and actively contributes to the academic community as a reviewer and guest editor for leading journals including Nature, Science, Nature Materials, Nano Letters, and ACS Nano. Through his research and service, Lee has significantly advanced next-generation electronics, optoelectronics, and energy-efficient semiconductor technologies, earning international recognition in nanoscience and materials engineering.